{"created":"2023-05-15T14:59:46.557891+00:00","id":81111,"links":{},"metadata":{"_buckets":{"deposit":"939f2c54-0513-4b39-8c60-f724d992f5ef"},"_deposit":{"created_by":1,"id":"81111","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"81111"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00081111","sets":["10:28"]},"author_link":["903987","903986"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2020-11-04","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Although semiconductor is a good transparent material for the radiation with the wavelength from mid to far infrared, it becomes highly reflective when the electron-hole plasma is formed on the surface by irradiating the intense laser pulse. Thus, it is possible to use as a reflective switch with high-speed response for the radiation of mid to far infrared range. To study the details of the reflective characteristics and dynamics of the plasma switch, we conduct the experiments for several semiconductor materials with the THz free electron laser (FEL) and the Ti:sapphire laser. In this symposium, we will present the overview of the THz FEL at Osaka University and some result of the experiments. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"4th QST International Symposium","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kawase, Keigo"}],"nameIdentifiers":[{"nameIdentifier":"903986","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawase, Keigo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"903987","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Study for electron-hole plasma on semiconductor surface with THz free electron laser","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Study for electron-hole plasma on semiconductor surface with THz free electron laser"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-11-02"},"publish_date":"2020-11-02","publish_status":"0","recid":"81111","relation_version_is_last":true,"title":["Study for electron-hole plasma on semiconductor surface with THz free electron laser"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:13:14.610446+00:00"}