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Color Centers in Wide-Gap Semiconductors for Quantum Technology
https://repo.qst.go.jp/records/80697
https://repo.qst.go.jp/records/806971fc08f92-620c-40eb-89ec-4fe7d800eb14
| Item type | 一般雑誌記事 / Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-10-12 | |||||
| タイトル | ||||||
| タイトル | Color Centers in Wide-Gap Semiconductors for Quantum Technology | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Yamazaki, Yuichi
× Yamazaki, Yuichi× Onoda, Shinobu× Ohshima, Takeshi× Yamazaki, Yuichi× Onoda, Shinobu× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Color centers in wide bandgap semiconductors (diamond and silicon carbide (SiC)) and their creation methods using irradiation are described. For diamond, nitrogen-vacancy (NV) centers as well as other color enters such as Si, Ge Sn related point defects are mentioned. For SiC, silicon vacancy (Vsi) as well as other defects such as di-vacancy, carbon-anti-site-carbon vacancy pair and nitrogen-vacancy are introduced. For the creation methods, both electron and ion irradiation techniques which are commonly used to create defects are introduced. In addition, micro beam irradiation techniques such as proton beam writing and heavy ion microbeam which can create color centers at certain locations in samples are described. | |||||
| 書誌情報 |
Defects in Functional Materials 発行日 2020-10 |
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| 出版者 | ||||||
| 出版者 | World Scientific | |||||
| ISBN | ||||||
| 識別子タイプ | ISBN | |||||
| 関連識別子 | 978-981-120-316-9 | |||||
