@article{oai:repo.qst.go.jp:00080697,
 author = {Yamazaki, Yuichi and Onoda, Shinobu and Ohshima, Takeshi and Yamazaki, Yuichi and Onoda, Shinobu and Ohshima, Takeshi},
 journal = {Defects in Functional Materials},
 month = {Oct},
 note = {Color centers in wide bandgap semiconductors (diamond and silicon carbide (SiC)) and their creation methods using irradiation are described. For diamond, nitrogen-vacancy (NV) centers as well as other color enters such as Si, Ge Sn related point defects are mentioned. For SiC, silicon vacancy (Vsi) as well as other defects such as di-vacancy, carbon-anti-site-carbon vacancy pair and nitrogen-vacancy are introduced.  For the creation methods, both electron and ion irradiation techniques which are commonly used to create defects are introduced. In addition, micro beam irradiation techniques such as proton beam writing and heavy ion microbeam which can create color centers at certain locations in samples are described.},
 title = {Color Centers in Wide-Gap Semiconductors for Quantum Technology},
 year = {2020}
}