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Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation
https://repo.qst.go.jp/records/80692
https://repo.qst.go.jp/records/80692dadfae89-92d4-4deb-a834-b52a7b4dadb7
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-10-12 | |||||
| タイトル | ||||||
| タイトル | Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Brodar, Tomislav
× Brodar, Tomislav× Bakrac, Luka× Capan, Ivana× Ohshima, Takeshi× Snoj, Luka× Radulovic, Vladimir× Pastuovic, Zeljko× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies (Z1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (-3/-2) and (-2/-) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials. We report on the introduction of metastable M-center by light/medium heavy ion implantation and neutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of M-center to the EH1 concentration profile is presented. |
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| 書誌情報 |
Crystals 巻 10, 号 9, p. 845, 発行日 2020-09 |
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| 出版者 | ||||||
| 出版者 | MDPI | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2073-4352 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.3390/cryst10090845 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.mdpi.com/2073-4352/10/9/845 | |||||
