{"created":"2023-05-15T14:59:28.423979+00:00","id":80692,"links":{},"metadata":{"_buckets":{"deposit":"fd51f73c-5bbc-4faf-acd4-cb5697c1777e"},"_deposit":{"created_by":1,"id":"80692","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80692"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080692","sets":["1"]},"author_link":["1013948","1013949","1013952","1013947","1013946","1013945","1013951","1013950"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageStart":"845","bibliographicVolumeNumber":"10","bibliographic_titles":[{"bibliographic_title":"Crystals"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies\n(Z1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (-3/-2) and (-2/-) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials.\nWe report on the introduction of metastable M-center by light/medium heavy ion implantation and\nneutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of\nM-center to the EH1 concentration profile is presented.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"MDPI"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.3390/cryst10090845","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.mdpi.com/2073-4352/10/9/845","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2073-4352","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Brodar, Tomislav"}],"nameIdentifiers":[{"nameIdentifier":"1013945","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Bakrac, Luka"}],"nameIdentifiers":[{"nameIdentifier":"1013946","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Capan, Ivana"}],"nameIdentifiers":[{"nameIdentifier":"1013947","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"1013948","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Snoj, Luka"}],"nameIdentifiers":[{"nameIdentifier":"1013949","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Radulovic, Vladimir"}],"nameIdentifiers":[{"nameIdentifier":"1013950","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pastuovic, Zeljko"}],"nameIdentifiers":[{"nameIdentifier":"1013951","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1013952","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-10-12"},"publish_date":"2020-10-12","publish_status":"0","recid":"80692","relation_version_is_last":true,"title":["Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T18:50:33.319807+00:00"}