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Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline alpha-SiC
https://repo.qst.go.jp/records/80591
https://repo.qst.go.jp/records/805913fcc26e7-dc7a-4fed-b98b-9e8e1bb7ced6
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-09-30 | |||||
| タイトル | ||||||
| タイトル | Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline alpha-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Li, Bingsheng
× Li, Bingsheng× Krsjak, Vladimir× Degmova, Jarmila× Wang, Zhiguang× Shen, Tielong× Li, Hui× Sojak, Stanislav× Slugen, Vladimir× Kawasuso, Atsuo× Atsuo, Kawasuso |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The evolution of He implantation-induced defects in polycrystalline α-SiC has been investigated by a combination of positron annihilation Doppler broadening spectroscopy (DBS) and transmission electron microscopy (TEM). Samples implanted at room temperature with 230 keV He+ ions to fluences of 1 × 1015, 5 × 1015 and 1 × 1016 ions/cm2 were isochronally annealed in vacuum at temperatures up to 1400 °C with a step of 100 °C. Excellent correlation between the calculated damage profile and the positron annihilation depth profile were obtained at low annealing temperatures, after considering the positron depth distribution given by so-called Makhovian profiles. The DBS data from the peak region revealed a reasonable correlation between positron trapping at vacancy-type defects and the He-to-dpa ratio. Thermal annealing at 1400 °C resulted in the incomplete recovery of the microstructure, where large cavities distributed along grain boundaries in the damage peak region are surrounded by small agglomerations of (helium)vacancy-type defects. |
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| 書誌情報 |
Journal of Nuclear Materials 巻 535, p. 152180, 発行日 2020-07 |
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| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0022-3115 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.jnucmat.2020.152180 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.sciencedirect.com/science/article/pii/S0022311519313406 | |||||
