{"created":"2023-05-15T14:59:24.049880+00:00","id":80591,"links":{},"metadata":{"_buckets":{"deposit":"c5c8fc5b-326c-42f2-bf24-2fd6a60ac2f4"},"_deposit":{"created_by":1,"id":"80591","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80591"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080591","sets":["1"]},"author_link":["1002624","1002623","1002618","1002625","1002622","1002621","1002626","1002619","1002620","1002617"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-07","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"152180","bibliographicVolumeNumber":"535","bibliographic_titles":[{"bibliographic_title":"Journal of Nuclear Materials"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The evolution of He implantation-induced defects in polycrystalline α-SiC has been investigated by a combination of positron annihilation Doppler broadening spectroscopy (DBS) and transmission electron microscopy (TEM). Samples implanted at room temperature with 230 keV He+ ions to fluences of 1 × 1015, 5 × 1015 and 1 × 1016 ions/cm2 were isochronally annealed in vacuum at temperatures up to 1400 °C with a step of 100 °C. Excellent correlation between the calculated damage profile and the positron annihilation depth profile were obtained at low annealing temperatures, after considering the positron depth distribution given by so-called Makhovian profiles.\n\nThe DBS data from the peak region revealed a reasonable correlation between positron trapping at vacancy-type defects and the He-to-dpa ratio. Thermal annealing at 1400 °C resulted in the incomplete recovery of the microstructure, where large cavities distributed along grain boundaries in the damage peak region are surrounded by small agglomerations of (helium)vacancy-type defects.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jnucmat.2020.152180","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.sciencedirect.com/science/article/pii/S0022311519313406","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-3115","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Li, Bingsheng"}],"nameIdentifiers":[{"nameIdentifier":"1002617","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Krsjak, Vladimir"}],"nameIdentifiers":[{"nameIdentifier":"1002618","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Degmova, Jarmila"}],"nameIdentifiers":[{"nameIdentifier":"1002619","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wang, Zhiguang"}],"nameIdentifiers":[{"nameIdentifier":"1002620","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shen, Tielong"}],"nameIdentifiers":[{"nameIdentifier":"1002621","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Li, Hui"}],"nameIdentifiers":[{"nameIdentifier":"1002622","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sojak, Stanislav"}],"nameIdentifiers":[{"nameIdentifier":"1002623","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Slugen, Vladimir"}],"nameIdentifiers":[{"nameIdentifier":"1002624","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawasuso, Atsuo"}],"nameIdentifiers":[{"nameIdentifier":"1002625","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsuo, Kawasuso","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1002626","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline alpha-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline alpha-SiC"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-09-30"},"publish_date":"2020-09-30","publish_status":"0","recid":"80591","relation_version_is_last":true,"title":["Positron annihilation spectroscopy study of vacancy-type defects in He implanted polycrystalline alpha-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:33:12.134089+00:00"}