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Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
https://repo.qst.go.jp/records/80476
https://repo.qst.go.jp/records/80476eb5e6b7b-b115-4bcf-89e4-47e62f729948
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-09-11 | |||||
| タイトル | ||||||
| タイトル | Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Deki, Manato× Nishimura, Tomoaki× Okada, Hiroshi× Watanabe, Hirotaka× Nitta, Shugo× Honda, Yoshio× Amano, Hiroshi× Ohshima, Takeshi× Sato, Shinichiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Since Rare-Earth (RE) doped Gallium Nitride (GaN) is expected to be used as electrically driven single photon source at room temperature, low dose RE-ion implantation and their activation as luminescent centers are of interest. This paper reports photoluminescence (PL) properties of Praseodymium (Pr) implanted GaN at different temperatures ranging from room temperature to 1200 °C. All the Pr-implanted GaN samples are thermally annealed after implantation and show strong PL emissions at 650.2 nm and 652.0 nm, originated from 3P0→3F2 transition in 4f-shell of Pr3+ ions. It is shown that the PL intensity originating from Pr3+ ions is reduced as the implantation temperature increases for the Pr-implanted samples annealed at 1200 °C. This result suggests that Pr3+ ions quench due to the formation of complex defects and defect clusters. The effect of high temperature implantation on the recovery of GaN crystallinity is discussed in terms of critical dose and displacement damage. |
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| 書誌情報 |
Nuclear Inst. and Methods in Physics Research B 巻 479, p. 7-12, 発行日 2020-06 |
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| 出版者 | ||||||
| 出版者 | Elservier | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0168-583X | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.nimb.2020.06.007 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.sciencedirect.com/science/article/pii/S0168583X20302834 | |||||
