@article{oai:repo.qst.go.jp:00080476,
 author = {Sato, Shinichiro and Deki, Manato and Nishimura, Tomoaki and Okada, Hiroshi and Watanabe, Hirotaka and Nitta, Shugo and Honda, Yoshio and Amano, Hiroshi and Ohshima, Takeshi and Sato, Shinichiro and Ohshima, Takeshi},
 journal = {Nuclear Inst. and Methods in Physics Research B},
 month = {Jun},
 note = {Since Rare-Earth (RE) doped Gallium Nitride (GaN) is expected to be used as electrically driven single photon source at room temperature, low dose RE-ion implantation and their activation as luminescent centers are of interest. This paper reports photoluminescence (PL) properties of Praseodymium (Pr) implanted GaN at different temperatures ranging from room temperature to 1200 °C. All the Pr-implanted GaN samples are thermally annealed after implantation and show strong PL emissions at 650.2 nm and 652.0 nm, originated from 3P0→3F2 transition in 4f-shell of Pr3+ ions. It is shown that the PL intensity originating from Pr3+ ions is reduced as the implantation temperature increases for the Pr-implanted samples annealed at 1200 °C. This result suggests that
Pr3+ ions quench due to the formation of complex defects and defect clusters. The effect of high temperature implantation on the recovery of GaN crystallinity is discussed in terms of critical dose and displacement damage.},
 pages = {7--12},
 title = {Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures},
 volume = {479},
 year = {2020}
}