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  1. 原著論文

Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology

https://repo.qst.go.jp/records/80058
https://repo.qst.go.jp/records/80058
b3bd3daa-509b-4439-8117-bfa4d62b7751
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-06-11
タイトル
タイトル Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Chen, Jiamin

× Chen, Jiamin

WEKO 1002504

Chen, Jiamin

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Sakuraba, Yuya

× Sakuraba, Yuya

WEKO 1002505

Sakuraba, Yuya

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Yakushiji, Kay

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WEKO 1002506

Yakushiji, Kay

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Kurashima, Yuichi

× Kurashima, Yuichi

WEKO 1002507

Kurashima, Yuichi

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Watanabe, Naoya

× Watanabe, Naoya

WEKO 1002508

Watanabe, Naoya

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Liu, Jun

× Liu, Jun

WEKO 1002509

Liu, Jun

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Songtian, Li

× Songtian, Li

WEKO 1002510

Songtian, Li

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Fukushima, Akio

× Fukushima, Akio

WEKO 1002511

Fukushima, Akio

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Takagi, Hideki

× Takagi, Hideki

WEKO 1002512

Takagi, Hideki

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Kikuchi, Katsuya

× Kikuchi, Katsuya

WEKO 1002513

Kikuchi, Katsuya

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Yuasa, Shinji

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WEKO 1002514

Yuasa, Shinji

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Hono, Kazuhiro

× Hono, Kazuhiro

WEKO 1002515

Hono, Kazuhiro

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Songtian, Li

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WEKO 1002516

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抄録
内容記述タイプ Abstract
内容記述 Fully-epitaxial magnetoresistance (MR) devices with half-metallic Heusler alloys has attracted considerable attention for years due to their excellent spin-dependent transport properties such as high MR ratio and ultra-low resistance-area product. However, their poor manufacturability due to the necessity of epitaxial growth on a special single crystalline substrate such as MgO(001) hinders their practical applications. To overcome this issue, in this study, we fabricated Heusler-based epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) film grown on Si substrate and directly bonded it to poly-crystalline electrode wafer by using three-dimensional (3D) integration processes such as direct wafer bonding and removal of backside Si substrate. First we explored suitable seed/buffer layers for the (001)-oriented epitaxial growth of Heusler CPP-GMR on Si(001) substrate. Si-subs/NiAl/CoFe seed/buffer structure was found to induce (001)-oriented epitaxial growth and to suppress an Al diffusion from NiAl to the Heusler electrode even after annealing at 500 °C, resulting in large MR ratio comparable to that with MgO substrate. After direct wafer bonding process, the microstructure analysis revealed clean damage-free bonded interface between the epitaxial Heusler GMR and poly-crystalline electrode films with Au capping layers. After the 3D integration processes, high MR performance has been successfully reproduced. This unique processing method enables the integration of high performance Heusler-based epitaxial spintronic devices for various practical applications.
書誌情報 Acta Materialia

巻 200, p. 1038-1045, 発行日 2020-06
出版者
出版者 Elsevier
ISSN
収録物識別子タイプ ISSN
収録物識別子 1359-6454
DOI
識別子タイプ DOI
関連識別子 10.1016/j.actamat.2020.04.002
関連サイト
識別子タイプ URI
関連識別子 https://www.sciencedirect.com/science/article/pii/S1359645420302524
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