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{"_buckets": {"deposit": "0e7093b6-be20-4bef-9356-58e0c11f4599"}, "_deposit": {"created_by": 1, "id": "80058", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "80058"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00080058", "sets": ["1"]}, "author_link": ["1002513", "1002510", "1002504", "1002506", "1002515", "1002505", "1002516", "1002509", "1002507", "1002512", "1002514", "1002511", "1002508"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-06", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "1045", "bibliographicPageStart": "1038", "bibliographicVolumeNumber": "200", "bibliographic_titles": [{"bibliographic_title": "Acta Materialia"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Fully-epitaxial magnetoresistance (MR) devices with half-metallic Heusler alloys has attracted considerable attention for years due to their excellent spin-dependent transport properties such as high MR ratio and ultra-low resistance-area product. However, their poor manufacturability due to the necessity of epitaxial growth on a special single crystalline substrate such as MgO(001) hinders their practical applications. To overcome this issue, in this study, we fabricated Heusler-based epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) film grown on Si substrate and directly bonded it to poly-crystalline electrode wafer by using three-dimensional (3D) integration processes such as direct wafer bonding and removal of backside Si substrate. First we explored suitable seed/buffer layers for the (001)-oriented epitaxial growth of Heusler CPP-GMR on Si(001) substrate. Si-subs/NiAl/CoFe seed/buffer structure was found to induce (001)-oriented epitaxial growth and to suppress an Al diffusion from NiAl to the Heusler electrode even after annealing at 500 °C, resulting in large MR ratio comparable to that with MgO substrate. After direct wafer bonding process, the microstructure analysis revealed clean damage-free bonded interface between the epitaxial Heusler GMR and poly-crystalline electrode films with Au capping layers. After the 3D integration processes, high MR performance has been successfully reproduced. This unique processing method enables the integration of high performance Heusler-based epitaxial spintronic devices for various practical applications.", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1016/j.actamat.2020.04.002", "subitem_relation_type_select": "DOI"}}]}, "item_8_relation_17": {"attribute_name": "関連サイト", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://www.sciencedirect.com/science/article/pii/S1359645420302524", "subitem_relation_type_select": "URI"}}]}, "item_8_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1359-6454", "subitem_source_identifier_type": "ISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Chen, Jiamin"}], "nameIdentifiers": [{"nameIdentifier": "1002504", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakuraba, Yuya"}], "nameIdentifiers": [{"nameIdentifier": "1002505", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yakushiji, Kay"}], "nameIdentifiers": [{"nameIdentifier": "1002506", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kurashima, Yuichi"}], "nameIdentifiers": [{"nameIdentifier": "1002507", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Watanabe, Naoya"}], "nameIdentifiers": [{"nameIdentifier": "1002508", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Liu, Jun"}], "nameIdentifiers": [{"nameIdentifier": "1002509", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Songtian, Li"}], "nameIdentifiers": [{"nameIdentifier": "1002510", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fukushima, Akio"}], "nameIdentifiers": [{"nameIdentifier": "1002511", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takagi, Hideki"}], "nameIdentifiers": [{"nameIdentifier": "1002512", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kikuchi, Katsuya"}], "nameIdentifiers": [{"nameIdentifier": "1002513", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yuasa, Shinji"}], "nameIdentifiers": [{"nameIdentifier": "1002514", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hono, Kazuhiro"}], "nameIdentifiers": [{"nameIdentifier": "1002515", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Songtian, Li", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1002516", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/80058", "pubdate": {"attribute_name": "公開日", "attribute_value": "2020-06-11"}, "publish_date": "2020-06-11", "publish_status": "0", "recid": "80058", "relation": {}, "relation_version_is_last": true, "title": ["Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology"], "weko_shared_id": -1}
Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology
https://repo.qst.go.jp/records/80058
https://repo.qst.go.jp/records/80058b3bd3daa-509b-4439-8117-bfa4d62b7751
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-06-11 | |||||
タイトル | ||||||
タイトル | Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Chen, Jiamin
× Chen, Jiamin× Sakuraba, Yuya× Yakushiji, Kay× Kurashima, Yuichi× Watanabe, Naoya× Liu, Jun× Songtian, Li× Fukushima, Akio× Takagi, Hideki× Kikuchi, Katsuya× Yuasa, Shinji× Hono, Kazuhiro× Songtian, Li |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Fully-epitaxial magnetoresistance (MR) devices with half-metallic Heusler alloys has attracted considerable attention for years due to their excellent spin-dependent transport properties such as high MR ratio and ultra-low resistance-area product. However, their poor manufacturability due to the necessity of epitaxial growth on a special single crystalline substrate such as MgO(001) hinders their practical applications. To overcome this issue, in this study, we fabricated Heusler-based epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) film grown on Si substrate and directly bonded it to poly-crystalline electrode wafer by using three-dimensional (3D) integration processes such as direct wafer bonding and removal of backside Si substrate. First we explored suitable seed/buffer layers for the (001)-oriented epitaxial growth of Heusler CPP-GMR on Si(001) substrate. Si-subs/NiAl/CoFe seed/buffer structure was found to induce (001)-oriented epitaxial growth and to suppress an Al diffusion from NiAl to the Heusler electrode even after annealing at 500 °C, resulting in large MR ratio comparable to that with MgO substrate. After direct wafer bonding process, the microstructure analysis revealed clean damage-free bonded interface between the epitaxial Heusler GMR and poly-crystalline electrode films with Au capping layers. After the 3D integration processes, high MR performance has been successfully reproduced. This unique processing method enables the integration of high performance Heusler-based epitaxial spintronic devices for various practical applications. | |||||
書誌情報 |
Acta Materialia 巻 200, p. 1038-1045, 発行日 2020-06 |
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出版者 | ||||||
出版者 | Elsevier | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1359-6454 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.actamat.2020.04.002 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.sciencedirect.com/science/article/pii/S1359645420302524 |