WEKO3
-
RootNode
アイテム
Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology
https://repo.qst.go.jp/records/80058
https://repo.qst.go.jp/records/80058b3bd3daa-509b-4439-8117-bfa4d62b7751
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-11 | |||||
| タイトル | ||||||
| タイトル | Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Chen, Jiamin
× Chen, Jiamin× Sakuraba, Yuya× Yakushiji, Kay× Kurashima, Yuichi× Watanabe, Naoya× Liu, Jun× Songtian, Li× Fukushima, Akio× Takagi, Hideki× Kikuchi, Katsuya× Yuasa, Shinji× Hono, Kazuhiro× Songtian, Li |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Fully-epitaxial magnetoresistance (MR) devices with half-metallic Heusler alloys has attracted considerable attention for years due to their excellent spin-dependent transport properties such as high MR ratio and ultra-low resistance-area product. However, their poor manufacturability due to the necessity of epitaxial growth on a special single crystalline substrate such as MgO(001) hinders their practical applications. To overcome this issue, in this study, we fabricated Heusler-based epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) film grown on Si substrate and directly bonded it to poly-crystalline electrode wafer by using three-dimensional (3D) integration processes such as direct wafer bonding and removal of backside Si substrate. First we explored suitable seed/buffer layers for the (001)-oriented epitaxial growth of Heusler CPP-GMR on Si(001) substrate. Si-subs/NiAl/CoFe seed/buffer structure was found to induce (001)-oriented epitaxial growth and to suppress an Al diffusion from NiAl to the Heusler electrode even after annealing at 500 °C, resulting in large MR ratio comparable to that with MgO substrate. After direct wafer bonding process, the microstructure analysis revealed clean damage-free bonded interface between the epitaxial Heusler GMR and poly-crystalline electrode films with Au capping layers. After the 3D integration processes, high MR performance has been successfully reproduced. This unique processing method enables the integration of high performance Heusler-based epitaxial spintronic devices for various practical applications. | |||||
| 書誌情報 |
Acta Materialia 巻 200, p. 1038-1045, 発行日 2020-06 |
|||||
| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1359-6454 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.actamat.2020.04.002 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.sciencedirect.com/science/article/pii/S1359645420302524 | |||||
Share
Cite as
Chen, Jiamin, Sakuraba, Yuya, Yakushiji, Kay, Kurashima, Yuichi, Watanabe, Naoya, Liu, Jun, Songtian, Li, Fukushima, Akio, Takagi, Hideki, Kikuchi, Katsuya, Yuasa, Shinji, Hono, Kazuhiro, Songtian, Li, 2020, Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology: Elsevier, 1038–1045 p.
Loading...
