{"created":"2023-05-15T14:59:00.506382+00:00","id":80058,"links":{},"metadata":{"_buckets":{"deposit":"0e7093b6-be20-4bef-9356-58e0c11f4599"},"_deposit":{"created_by":1,"id":"80058","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80058"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080058","sets":["1"]},"author_link":["1002513","1002510","1002504","1002506","1002515","1002505","1002516","1002509","1002507","1002512","1002514","1002511","1002508"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"1045","bibliographicPageStart":"1038","bibliographicVolumeNumber":"200","bibliographic_titles":[{"bibliographic_title":"Acta Materialia"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Fully-epitaxial magnetoresistance (MR) devices with half-metallic Heusler alloys has attracted considerable attention for years due to their excellent spin-dependent transport properties such as high MR ratio and ultra-low resistance-area product. However, their poor manufacturability due to the necessity of epitaxial growth on a special single crystalline substrate such as MgO(001) hinders their practical applications. To overcome this issue, in this study, we fabricated Heusler-based epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) film grown on Si substrate and directly bonded it to poly-crystalline electrode wafer by using three-dimensional (3D) integration processes such as direct wafer bonding and removal of backside Si substrate. First we explored suitable seed/buffer layers for the (001)-oriented epitaxial growth of Heusler CPP-GMR on Si(001) substrate. Si-subs/NiAl/CoFe seed/buffer structure was found to induce (001)-oriented epitaxial growth and to suppress an Al diffusion from NiAl to the Heusler electrode even after annealing at 500 °C, resulting in large MR ratio comparable to that with MgO substrate. After direct wafer bonding process, the microstructure analysis revealed clean damage-free bonded interface between the epitaxial Heusler GMR and poly-crystalline electrode films with Au capping layers. After the 3D integration processes, high MR performance has been successfully reproduced. This unique processing method enables the integration of high performance Heusler-based epitaxial spintronic devices for various practical applications.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.actamat.2020.04.002","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.sciencedirect.com/science/article/pii/S1359645420302524","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1359-6454","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Chen, Jiamin"}],"nameIdentifiers":[{"nameIdentifier":"1002504","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakuraba, Yuya"}],"nameIdentifiers":[{"nameIdentifier":"1002505","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yakushiji, Kay"}],"nameIdentifiers":[{"nameIdentifier":"1002506","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kurashima, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"1002507","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, Naoya"}],"nameIdentifiers":[{"nameIdentifier":"1002508","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Jun"}],"nameIdentifiers":[{"nameIdentifier":"1002509","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Songtian, Li"}],"nameIdentifiers":[{"nameIdentifier":"1002510","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fukushima, Akio"}],"nameIdentifiers":[{"nameIdentifier":"1002511","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takagi, Hideki"}],"nameIdentifiers":[{"nameIdentifier":"1002512","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kikuchi, Katsuya"}],"nameIdentifiers":[{"nameIdentifier":"1002513","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuasa, Shinji"}],"nameIdentifiers":[{"nameIdentifier":"1002514","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hono, Kazuhiro"}],"nameIdentifiers":[{"nameIdentifier":"1002515","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Songtian, Li","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1002516","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-06-11"},"publish_date":"2020-06-11","publish_status":"0","recid":"80058","relation_version_is_last":true,"title":["Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:33:42.883240+00:00"}