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  1. 原著論文

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

https://repo.qst.go.jp/records/79920
https://repo.qst.go.jp/records/79920
0704c0d8-2e13-4988-8d6d-a81e2ae3ee20
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-04-27
タイトル
タイトル Influence of Irradiation on Defect Spin Coherence in Silicon Carbide
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Kasper, C.

× Kasper, C.

WEKO 866716

Kasper, C.

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Klenkert, D.

× Klenkert, D.

WEKO 866717

Klenkert, D.

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Shang, Z.

× Shang, Z.

WEKO 866718

Shang, Z.

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Simin, D.

× Simin, D.

WEKO 866719

Simin, D.

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Gottscholl, A.

× Gottscholl, A.

WEKO 866720

Gottscholl, A.

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Sperlich, A.

× Sperlich, A.

WEKO 866721

Sperlich, A.

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Kraus, H.

× Kraus, H.

WEKO 866722

Kraus, H.

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Schneider, C.

× Schneider, C.

WEKO 866723

Schneider, C.

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Zhou, S.

× Zhou, S.

WEKO 866724

Zhou, S.

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Trupke, M.

× Trupke, M.

WEKO 866725

Trupke, M.

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Kada, W.

× Kada, W.

WEKO 866726

Kada, W.

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 866727

Ohshima, Takeshi

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Dyakonov, V.

× Dyakonov, V.

WEKO 866728

Dyakonov, V.

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V. Astakhov, G.

× V. Astakhov, G.

WEKO 866729

V. Astakhov, G.

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 866730

en Ohshima, Takeshi

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抄録
内容記述タイプ Abstract
内容記述 Irradiation-induced lattice defects in silicon carbide (SiC) are regarded as promising candidates for a multitude of quantum-information applications and quantum sensing. One of the most crucial parameters of any quantum system is the quantum coherence for the defects. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice
relaxation time (T1) and spin-coherence time (T2) of silicon vacancies in 4H-SiC created by neutron, electron, and proton irradiation in a broad range of fluences. In addition, we investigated the effect of irradiation energy and sample annealing. We establish a robustness of the T1 time against all types of irradiation and reveal a universal scaling of the T2 time with the emitter density. Our results can be used to optimize the coherence properties of silicon-vacancy qubits in SiC for specific tasks.
書誌情報 Physical Review Applied

巻 13, p. 044054, 発行日 2020-04
ISSN
収録物識別子タイプ ISSN
収録物識別子 2331-7019
DOI
識別子タイプ DOI
関連識別子 10.1103/PhysRevApplied.13.044054
関連サイト
識別子タイプ URI
関連識別子 https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.044054
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