{"created":"2023-05-15T14:58:54.645966+00:00","id":79920,"links":{},"metadata":{"_buckets":{"deposit":"91682e08-ae55-498e-92aa-2e3555d21ba3"},"_deposit":{"created_by":1,"id":"79920","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"79920"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00079920","sets":["1"]},"author_link":["866718","866723","866728","866719","866725","866729","866726","866717","866722","866730","866727","866720","866724","866716","866721"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-04","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"044054","bibliographicVolumeNumber":"13","bibliographic_titles":[{"bibliographic_title":"Physical Review Applied"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Irradiation-induced lattice defects in silicon carbide (SiC) are regarded as promising candidates for a multitude of quantum-information applications and quantum sensing. One of the most crucial parameters of any quantum system is the quantum coherence for the defects. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice\nrelaxation time (T1) and spin-coherence time (T2) of silicon vacancies in 4H-SiC created by neutron, electron, and proton irradiation in a broad range of fluences. In addition, we investigated the effect of irradiation energy and sample annealing. We establish a robustness of the T1 time against all types of irradiation and reveal a universal scaling of the T2 time with the emitter density. Our results can be used to optimize the coherence properties of silicon-vacancy qubits in SiC for specific tasks.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevApplied.13.044054","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.044054","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2331-7019","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kasper, C."}],"nameIdentifiers":[{"nameIdentifier":"866716","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Klenkert, D."}],"nameIdentifiers":[{"nameIdentifier":"866717","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shang, Z."}],"nameIdentifiers":[{"nameIdentifier":"866718","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Simin, D."}],"nameIdentifiers":[{"nameIdentifier":"866719","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gottscholl, A."}],"nameIdentifiers":[{"nameIdentifier":"866720","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sperlich, A."}],"nameIdentifiers":[{"nameIdentifier":"866721","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kraus, H."}],"nameIdentifiers":[{"nameIdentifier":"866722","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Schneider, C."}],"nameIdentifiers":[{"nameIdentifier":"866723","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zhou, S."}],"nameIdentifiers":[{"nameIdentifier":"866724","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Trupke, M."}],"nameIdentifiers":[{"nameIdentifier":"866725","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kada, W."}],"nameIdentifiers":[{"nameIdentifier":"866726","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"866727","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Dyakonov, V."}],"nameIdentifiers":[{"nameIdentifier":"866728","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"V. Astakhov, G."}],"nameIdentifiers":[{"nameIdentifier":"866729","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"866730","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of Irradiation on Defect Spin Coherence in Silicon Carbide","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of Irradiation on Defect Spin Coherence in Silicon Carbide"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-04-27"},"publish_date":"2020-04-27","publish_status":"0","recid":"79920","relation_version_is_last":true,"title":["Influence of Irradiation on Defect Spin Coherence in Silicon Carbide"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:57:29.874860+00:00"}