SOI Thin Microdosimeters for High LET Single-Event Upset Studies in Fe, O, Xe, and Cocktail Ion Beam Fields

The response of a 5-µm-thin silicon on insulator (SOI) 3-D microdosimeter was investigated for single-event
upset applications by measuring the linear energy transfer (LET)
of different high LET ions. The charge collection characteristics
of the device were performed using the ion beam-induced
charge collection (IBIC) technique with 3- and 5.5-MeV He2+
ions incident on the microdosimeter. The microdosimeter was
irradiated with 16O, 56Fe, and 124Xe ions and was able to
determine the LET within 5% for most configurations apart
from 124Xe. It was observed that on average, measured LET was
12% lower for 30-MeV/u 124Xe ion traversing through different
thickness Kapton absorbers in comparison to Geant4 simulations.
This discrepancy can be partly attributed to uncertainties in
the thickness of the energy degraders and the thickness of the
SOI layer of the devices. The effects of overlayer thickness
variation are not easily observed for ions with much lower LET
as O and Fe. Based on that, it is difficult to make conclusion
that the plasma effect is observed for 30-MeV/u124Xe ions and
further research to be carried out for ion with LET higher than
12 MeV/µm.

書誌情報

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

巻 67, 号 1, p. 146-153, 発行日 2020-03

出版者

IEEE

ISSN

収録物識別子タイプ

ISSN

収録物識別子

0018-9499

DOI

識別子タイプ

DOI

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2023-05-15 17:27:32.014220

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