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Measurement of the Lateral Charge Distribution in Silicon Generated by High-Energy Ion Incidence
https://repo.qst.go.jp/records/78268
https://repo.qst.go.jp/records/7826810343d14-251a-4df7-a2cb-dd58afb28529
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-12-28 | |||||
| タイトル | ||||||
| タイトル | Measurement of the Lateral Charge Distribution in Silicon Generated by High-Energy Ion Incidence | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Abo, Satoshi
× Abo, Satoshi× Tani, Kenichi× Wakaya, Fujio× Onoda, Shinobu× Miyato, Yuji× Yamashita, Hayato× Abe, Masayuki× Onoda, Shinobu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The lateral distribution of the charge generated in silicon by a 15 MeV oxygen-ion incidence was experimentally measured. The lateral radius of the charge region generated because of this 15 MeV oxygen-ion incidence was 300-400 nm, which is much wider than that calculated using the well-known Katz theory. In addition, the measured peak concentration of the generated charge around the ion incident point was two orders of magnitude lower than that calculated using the Katz theory. | |||||
| 書誌情報 |
2018 22nd International Conference on Ion Implantation Technology (IIT) p. 156-159, 発行日 2019-08 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISBN | ||||||
| 識別子タイプ | ISBN | |||||
| 関連識別子 | 978-1-5386-6829-0 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/IIT.2018.8807893 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://ieeexplore.ieee.org/abstract/document/8807893 | |||||
