@inproceedings{oai:repo.qst.go.jp:00078268,
 author = {Abo, Satoshi and Tani, Kenichi and Wakaya, Fujio and Onoda, Shinobu and Miyato, Yuji and Yamashita, Hayato and Abe, Masayuki and Onoda, Shinobu},
 book = {2018 22nd International Conference on Ion Implantation Technology (IIT)},
 month = {Aug},
 note = {The lateral distribution of the charge generated in silicon by a 15 MeV oxygen-ion incidence was experimentally measured. The lateral radius of the charge region generated because of this 15 MeV oxygen-ion incidence was 300-400 nm, which is much wider than that calculated using the well-known Katz theory. In addition, the measured peak concentration of the generated charge around the ion incident point was two orders of magnitude lower than that calculated using the Katz theory.},
 pages = {156--159},
 publisher = {IEEE},
 title = {Measurement of the Lateral Charge Distribution in Silicon Generated by High-Energy Ion Incidence},
 year = {2019}
}