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NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties
https://repo.qst.go.jp/records/78101
https://repo.qst.go.jp/records/78101ca06dd51-1941-47eb-965f-31e1bfd24cbe
Item type | 会議発表用資料 / Presentation(1) | |||||
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公開日 | 2019-11-15 | |||||
タイトル | ||||||
タイトル | NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Higuchi, Taisei× Onoda, Shinobu× Yamazaki, Yuichi× Hijikata, Yasuto× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Higuchi, Taisei× Onoda, Shinobu× Yamazaki, Yuichi× Ohshima, Takeshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Recently, NCVSi- centers in silicon carbide (SiC), i.e. negatively-charged pairs of silicon vacancy (VSi) and nitrogen (N) atom on an adjacent carbon (C) site, have attracted attention as they are an optically active defect with an electronic structure strongly resembling that of NV centers in diamond. The emission wavelength of NCVSi- centers is around 1300 nm at room temperature (RT) which is advantageous for in-vivo imaging and sensing (temperature, magnetic field, etc.), since the near-infrared (NIR) light can penetrate biological tissues efficiently than visible light. Although NCVSi- centers are known to be formed by charged particle bombardment and subsequent thermal annealing, fundamental optical properties are less well understood. In this study, we clarified the luminescence lifetime and saturation behavior of photon emisstion, and their excitation wavelength dependence. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The 2nd International Forum on Quantum Metrology and Sensing (IFQMS) | |||||
発表年月日 | ||||||
日付 | 2019-12-17 | |||||
日付タイプ | Issued |