@misc{oai:repo.qst.go.jp:00078101,
 author = {Sato, Shinichiro and Narahara, Takuma and Higuchi, Taisei and Onoda, Shinobu and Yamazaki, Yuichi and Hijikata, Yasuto and C. Gibson, Brant and D. Greentree, Andrew and Ohshima, Takeshi and Sato, Shinichiro and Narahara, Takuma and Higuchi, Taisei and Onoda, Shinobu and Yamazaki, Yuichi and Ohshima, Takeshi},
 month = {Dec},
 note = {Recently, NCVSi- centers in silicon carbide (SiC), i.e. negatively-charged pairs of silicon vacancy (VSi) and nitrogen (N) atom on an adjacent carbon (C) site, have attracted attention as they are an optically active defect with an electronic structure strongly resembling that of NV centers in diamond. The emission wavelength of NCVSi- centers is around 1300 nm at room temperature (RT) which is advantageous for in-vivo imaging and sensing (temperature, magnetic field, etc.), since the near-infrared (NIR) light can penetrate biological tissues efficiently than visible light. Although NCVSi- centers are known to be formed by charged particle bombardment and subsequent thermal annealing, fundamental optical properties are less well understood. In this study, we clarified the luminescence lifetime and saturation behavior of photon emisstion, and their excitation wavelength dependence., The 2nd International Forum on Quantum Metrology and Sensing (IFQMS)},
 title = {NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties},
 year = {2019}
}