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  1. 原著論文

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

https://repo.qst.go.jp/records/78070
https://repo.qst.go.jp/records/78070
267f8939-ccb2-4d2b-9f06-61a87b43d1ee
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-12-06
タイトル
タイトル Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Castelletto, Stefania

× Castelletto, Stefania

WEKO 998735

Castelletto, Stefania

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Salam Al Atem, Abdul

× Salam Al Atem, Abdul

WEKO 998736

Salam Al Atem, Abdul

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Ahmed Inam, Faraz

× Ahmed Inam, Faraz

WEKO 998737

Ahmed Inam, Faraz

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Jurgen von Bardeleben, Hans

× Jurgen von Bardeleben, Hans

WEKO 998738

Jurgen von Bardeleben, Hans

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Hameau, Sophie

× Hameau, Sophie

WEKO 998739

Hameau, Sophie

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Fahad Almutairi, Ahmed

× Fahad Almutairi, Ahmed

WEKO 998740

Fahad Almutairi, Ahmed

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Guillot, Gerard

× Guillot, Gerard

WEKO 998741

Guillot, Gerard

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Sato, Shinichiro

× Sato, Shinichiro

WEKO 998742

Sato, Shinichiro

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Boretti, Alberto

× Boretti, Alberto

WEKO 998743

Boretti, Alberto

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Marie Bluet, Jean

× Marie Bluet, Jean

WEKO 998744

Marie Bluet, Jean

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Shinichiro, Sato

× Shinichiro, Sato

WEKO 998745

en Shinichiro, Sato

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抄録
内容記述タイプ Abstract
内容記述 We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color
centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the
emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.
書誌情報 Beilstein Journal of Nanotechnology

巻 10, p. 2383-2395, 発行日 2019-12
ISSN
収録物識別子タイプ ISSN
収録物識別子 2190-4286
DOI
識別子タイプ DOI
関連識別子 10.3762/bjnano.10.229
関連サイト
識別子タイプ URI
関連識別子 https://www.beilstein-journals.org/bjnano/articles/10/229
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