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Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
https://repo.qst.go.jp/records/78070
https://repo.qst.go.jp/records/78070267f8939-ccb2-4d2b-9f06-61a87b43d1ee
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-12-06 | |||||
タイトル | ||||||
タイトル | Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Castelletto, Stefania
× Castelletto, Stefania× Salam Al Atem, Abdul× Ahmed Inam, Faraz× Jurgen von Bardeleben, Hans× Hameau, Sophie× Fahad Almutairi, Ahmed× Guillot, Gerard× Sato, Shinichiro× Boretti, Alberto× Marie Bluet, Jean× Shinichiro, Sato |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared. |
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書誌情報 |
Beilstein Journal of Nanotechnology 巻 10, p. 2383-2395, 発行日 2019-12 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2190-4286 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.3762/bjnano.10.229 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.beilstein-journals.org/bjnano/articles/10/229 |