@article{oai:repo.qst.go.jp:00078070,
 author = {Castelletto, Stefania and Salam Al Atem, Abdul and Ahmed Inam, Faraz and Jurgen von Bardeleben, Hans and Hameau, Sophie and Fahad Almutairi, Ahmed and Guillot, Gerard and Sato, Shinichiro and Boretti, Alberto and Marie Bluet, Jean and Shinichiro, Sato},
 journal = {Beilstein Journal of Nanotechnology},
 month = {Dec},
 note = {We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color
centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the
emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.},
 pages = {2383--2395},
 title = {Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars},
 volume = {10},
 year = {2019}
}