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Controlled Strong Excitation of Silicon as a Step towards Processing Materials at Sub-nanometer Precision
https://repo.qst.go.jp/records/77775
https://repo.qst.go.jp/records/77775c29bb302-9fc4-45eb-b07f-04a29d78167b
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-04-08 | |||||
| タイトル | ||||||
| タイトル | Controlled Strong Excitation of Silicon as a Step towards Processing Materials at Sub-nanometer Precision | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
タンフン, ヂン
× タンフン, ヂン× Medvedev, Nikita× 石野, 雅彦× 北村, 俊幸× 長谷川, 登× 乙部, 智仁× Higashiguchi, Takeshi× Sakaue, Kazuyuki× Washio, Masakazu× Hatano, Tadashi× Kon, Akira× Kubota, Yuya× Inubushi, Yuichi× Owada, Shigeki× Shibuya, Tatsunori× Ziaja, Beata× 錦野, 将元× Dinh, Thanhhung× Masahiko, Ishino× Toshiyuki, Kitamura× Noboru, Hasegawa× Tomohito, Otobe× Masaharu, Nishikino |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Interaction of a solid material with focused, intense pulses of high-energy photons or other particles (such as electrons and ions) creates a strong electronic excitation state within an ultra-short time and on ultra-small spatial scales. This offers the possibility to control the response of a material on a spatial scale less than a nanometer – crucial for the next generation of nano-devices. Here we create craters on a surface of a silicon substrate by focusing single femtosecond extreme ultraviolet pulse from the SACLA free-electron laser. We investigate the resulting surface modification in the vicinity of damage thresholds, establishing a connection to microscopic theoretical approaches, and, with their help, illustrating physical mechanisms for damage creation. The cooling during ablation by means of rapid electron and energy transport can suppress undesired hydrodynamical motions, allowing to directly process the silicon material with a precision reaching the observable limitation of an atomic force microscope. | |||||
| 書誌情報 |
Communications Physics 巻 2, p. 150, 発行日 2019-11 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2399-3650 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1038/s42005-019-0253-2 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.nature.com/articles/s42005-019-0253-2 | |||||
