@article{oai:repo.qst.go.jp:00077775,
 author = {タンフン, ヂン and Medvedev, Nikita and 石野, 雅彦 and 北村, 俊幸 and 長谷川, 登 and 乙部, 智仁 and Higashiguchi, Takeshi and Sakaue, Kazuyuki and Washio, Masakazu and Hatano, Tadashi and Kon, Akira and Kubota, Yuya and Inubushi, Yuichi and Owada, Shigeki and Shibuya, Tatsunori and Ziaja, Beata and 錦野, 将元 and Dinh, Thanhhung and Masahiko, Ishino and Toshiyuki, Kitamura and Noboru, Hasegawa and Tomohito, Otobe and Masaharu, Nishikino},
 journal = {Communications Physics},
 month = {Nov},
 note = {Interaction of a solid material with focused, intense pulses of high-energy photons or other particles (such as electrons and ions) creates a strong electronic excitation state within an ultra-short time and on ultra-small spatial scales. This offers the possibility to control the response of a material on a spatial scale less than a nanometer – crucial for the next generation of nano-devices. Here we create craters on a surface of a silicon substrate by focusing single femtosecond extreme ultraviolet pulse from the SACLA free-electron laser. We investigate the resulting surface modification in the vicinity of damage thresholds, establishing a connection to microscopic theoretical approaches, and, with their help, illustrating physical mechanisms for damage creation. The cooling during ablation by means of rapid electron and energy transport can suppress undesired hydrodynamical motions, allowing to directly process the silicon material with a precision reaching the observable limitation of an atomic force microscope.},
 title = {Controlled Strong Excitation of Silicon as a Step towards Processing Materials at Sub-nanometer Precision},
 volume = {2},
 year = {2019}
}