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Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation
https://repo.qst.go.jp/records/77674
https://repo.qst.go.jp/records/7767402f7db39-119e-4974-87d8-91e182c07f22
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-28 | |||||
| タイトル | ||||||
| タイトル | Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Oi, Nobutaka
× Oi, Nobutaka× Kudo, Takuya× Inaba, Masafumi× Okubo, Satoshi× Onoda, Shinobu× Hiraiwa, Atsushi× Kawarada, Hiroshi× Shinobu, Onoda |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Diamond is a promising material for power applications owing to its excellent physical properties. Two-dimensional hole gas (2DHG) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) with hydrogen-terminated (C-H) channel have high current densities and high breakdown fields but often show normally-ON operation. From the viewpoint of safety, normally-OFF operation is required for power applications. In this letter, we used ion implantation to form a shallow and thin nitrogen-doped layer below the C-H channel region, which realized normally-OFF operation. Nitrogen-ion implanted length is fixed at 5 or 10 μm. Nitrogen is a deep donor (1.7 eV) and the nitrogen-doped layer prevents hole accumulation near the surface. The threshold voltage was as high as -2.5 V and no obvious dependence on the threshold voltage of nitrogenion implanted length is observed. The breakdown field was 2.7 MV/cm at room temperature. Of 64 devices with a common gate length, 75% showed normally-OFF operation. We confirmed the threshold voltage shift by a thin and shallow nitrogen-doped layer formed by ion implantation. | |||||
| 書誌情報 |
IEEE Electron Device Letters 巻 40, 号 6, p. 933-936, 発行日 2019-05 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0741-3106 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/LED.2019.2912211 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://ieeexplore.ieee.org/abstract/document/8715486 | |||||
