{"created":"2023-05-15T14:57:14.293969+00:00","id":77674,"links":{},"metadata":{"_buckets":{"deposit":"6f9a8ea6-1b0c-44a4-96b2-4eb5e613c804"},"_deposit":{"created_by":1,"id":"77674","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77674"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077674","sets":["1"]},"author_link":["998664","998662","998661","998663","998665","998667","998660","998666"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"936","bibliographicPageStart":"933","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"IEEE Electron Device Letters"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Diamond is a promising material for power applications owing to its excellent physical properties. Two-dimensional hole gas (2DHG) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) with hydrogen-terminated (C-H) channel have high current densities and high breakdown fields but often show normally-ON operation. From the viewpoint of safety, normally-OFF operation is required for power applications. In this letter, we used ion implantation to form a shallow and thin nitrogen-doped layer below the C-H channel region, which realized normally-OFF operation. Nitrogen-ion implanted length is fixed at 5 or 10 μm. Nitrogen is a deep donor (1.7 eV) and the nitrogen-doped layer prevents hole accumulation near the surface. The threshold voltage was as high as -2.5 V and no obvious dependence on the threshold voltage of nitrogenion implanted length is observed. The breakdown field was 2.7 MV/cm at room temperature. Of 64 devices with a common gate length, 75% showed normally-OFF operation. We confirmed the threshold voltage shift by a thin and shallow nitrogen-doped layer formed by ion implantation.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/LED.2019.2912211","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://ieeexplore.ieee.org/abstract/document/8715486","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0741-3106","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Oi, Nobutaka"}],"nameIdentifiers":[{"nameIdentifier":"998660","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kudo, Takuya"}],"nameIdentifiers":[{"nameIdentifier":"998661","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Inaba, Masafumi"}],"nameIdentifiers":[{"nameIdentifier":"998662","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okubo, Satoshi"}],"nameIdentifiers":[{"nameIdentifier":"998663","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu"}],"nameIdentifiers":[{"nameIdentifier":"998664","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiraiwa, Atsushi"}],"nameIdentifiers":[{"nameIdentifier":"998665","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawarada, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"998666","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinobu, Onoda","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"998667","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-11-28"},"publish_date":"2019-11-28","publish_status":"0","recid":"77674","relation_version_is_last":true,"title":["Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:48:04.796940+00:00"}