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Effect of irradiation conditions on the film growth of iron oxide on Si substrate by ion beam sputter deposition method

https://repo.qst.go.jp/records/77073
https://repo.qst.go.jp/records/77073
f453fd15-7eff-49b2-9dc0-92ecf8dcfe02
Item type 会議発表用資料 / Presentation(1)
公開日 2019-05-21
タイトル
タイトル Effect of irradiation conditions on the film growth of iron oxide on Si substrate by ion beam sputter deposition method
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 山中, 健太

× 山中, 健太

WEKO 789946

山中, 健太

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山口, 憲司

× 山口, 憲司

WEKO 789947

山口, 憲司

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Yamanaka, Kenta

× Yamanaka, Kenta

WEKO 789948

en Yamanaka, Kenta

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Yamaguchi, Kenji

× Yamaguchi, Kenji

WEKO 789949

en Yamaguchi, Kenji

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抄録
内容記述タイプ Abstract
内容記述 Si-based spintronics has drawn considerable attention in recent years. We are focusing on Fe3O4, which is theoretically said to have a 100% spin polarization and is a very promising material for spintronics applications. However, there are various forms of iron oxide, such as FeO, Fe3O4, Fe2O3, etc., so that the chemical forms of the oxide may be dependent on the thermochemical conditions during film deposition. In so-called an “ion beam sputter deposition (IBSD)” method, it is possible to vary chemical atmosphere during deposition in the reaction vessel by choosing appropriate ion species to sputter solid target. In this study, we aimed at preparing a single-phase, highly-oriented Fe3O4 thin film on a crystalline Si substrate under different irradiation conditions of IBSD, to clarify their effect on the film growth.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)
発表年月日
日付 2019-07-20
日付タイプ Issued
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