@misc{oai:repo.qst.go.jp:00077073,
 author = {山中, 健太 and 山口, 憲司 and Yamanaka, Kenta and Yamaguchi, Kenji},
 month = {Jul},
 note = {Si-based spintronics has drawn considerable attention in recent years.  We are focusing on Fe3O4, which is theoretically said to have a 100% spin polarization and is a very promising material for spintronics applications.  However, there are various forms of iron oxide, such as FeO, Fe3O4, Fe2O3, etc., so that the chemical forms of the oxide may be dependent on the thermochemical conditions during film deposition.  In so-called an “ion beam sputter deposition (IBSD)” method, it is possible to vary chemical atmosphere during deposition in the reaction vessel by choosing appropriate ion species to sputter solid target. In this study, we aimed at preparing a single-phase, highly-oriented Fe3O4 thin film on a crystalline Si substrate under different irradiation conditions of IBSD, to clarify their effect on the film growth., The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)},
 title = {Effect of irradiation conditions on the film growth of iron oxide on Si substrate by ion beam sputter deposition method},
 year = {2019}
}