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Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model
https://repo.qst.go.jp/records/76942
https://repo.qst.go.jp/records/769427a51ec2c-3df2-4edf-80f0-303c9c684776
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-05-07 | |||||
| タイトル | ||||||
| タイトル | Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐々木, 明
× 佐々木, 明× Sasaki, Akira |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Exposure and development processes of EUV resists are investigated using numerical model and simulation. Diffusion limited aggregation (DLA) and percolation model are combined to investigate the dissolution process of metal particle resists. The relief image, which is produced after the exposure by a limited number of photons is investigated to identify the effect of stochastic effect of the material and dose, by investigating the line width roughness (LWR) and rate of failure of the pattern from the calculated image. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | SPIE photomask technology + EUV lithography | |||||
| 発表年月日 | ||||||
| 日付 | 2019-09-16 | |||||
| 日付タイプ | Issued | |||||
