{"created":"2023-05-15T14:56:41.784260+00:00","id":76942,"links":{},"metadata":{"_buckets":{"deposit":"45f71e32-0515-4883-b078-e69aab42e63d"},"_deposit":{"created_by":1,"id":"76942","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76942"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076942","sets":["10:28"]},"author_link":["786553","786554"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-16","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Exposure and development processes of EUV resists are investigated using numerical model and simulation. Diffusion limited aggregation (DLA) and percolation model are combined to investigate the dissolution process of metal particle resists. The relief image, which is produced after the exposure by a limited number of photons is investigated to identify the effect of stochastic effect of the material and dose, by investigating the line width roughness (LWR) and rate of failure of the pattern from the calculated image.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"SPIE photomask technology + EUV lithography","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 明"}],"nameIdentifiers":[{"nameIdentifier":"786553","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786554","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-05-07"},"publish_date":"2019-05-07","publish_status":"0","recid":"76942","relation_version_is_last":true,"title":["Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:08:43.843833+00:00"}