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Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes
https://repo.qst.go.jp/records/76532
https://repo.qst.go.jp/records/7653201dabe65-b109-44ac-be79-1eb90dabd51b
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-08-21 | |||||
| タイトル | ||||||
| タイトル | Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Capan, Ivana
× Capan, Ivana× Yamazaki, Yuichi× Oki, Yuya× Brodar, Tomislav× Makino, Takahiro× Ohshima, Takeshi× Yamazaki, Yuichi× Oki, Yuya× Makino, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects. |
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| 書誌情報 |
Crystals 巻 9, 号 7, p. 328, 発行日 2019-06 |
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| 出版者 | ||||||
| 出版者 | MDPI | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2073-4352 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.3390/cryst9070328 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.mdpi.com/2073-4352/9/7/328 | |||||
