{"created":"2023-05-15T14:56:20.725125+00:00","id":76532,"links":{},"metadata":{"_buckets":{"deposit":"264f0dbf-90cf-4eb0-b201-b21f0ce24f03"},"_deposit":{"created_by":1,"id":"76532","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76532"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076532","sets":["1"]},"author_link":["896894","896892","896895","896901","896897","896896","896898","896899","896893","896900"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"328","bibliographicVolumeNumber":"9","bibliographic_titles":[{"bibliographic_title":"Crystals"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC\nSchottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"MDPI"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.3390/cryst9070328","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.mdpi.com/2073-4352/9/7/328","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2073-4352","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Capan, Ivana"}],"nameIdentifiers":[{"nameIdentifier":"896892","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"896893","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oki, Yuya"}],"nameIdentifiers":[{"nameIdentifier":"896894","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Brodar, Tomislav"}],"nameIdentifiers":[{"nameIdentifier":"896895","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"896896","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"896897","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"896898","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oki, Yuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"896899","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"896900","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"896901","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-08-21"},"publish_date":"2019-08-21","publish_status":"0","recid":"76532","relation_version_is_last":true,"title":["Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:22:43.945069+00:00"}