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Sensitivity enhancement of poly(methyl methacrylate) upon exposure to picosecond-pulsed extreme ultraviolet
https://repo.qst.go.jp/records/76492
https://repo.qst.go.jp/records/76492fae3f6a7-30b0-42d9-bd69-7434d2cb2d4a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-08-19 | |||||
| タイトル | ||||||
| タイトル | Sensitivity enhancement of poly(methyl methacrylate) upon exposure to picosecond-pulsed extreme ultraviolet | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Hosaka, Yuji
× Hosaka, Yuji× Oyama, Tomoko× Yamamoto, Hiroki× Ishino, Masahiko× Dinh, Thanhhung× Nishikino, Masaharu× Maekawa, Yasunari× Hosaka, Yuji× Oyama, Tomoko× Yamamoto, Hiroki× Ishino, Masahiko× Dinh, Thanhhung× Nishikino, Masaharu× Maekawa, Yasunari |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Short-pulse extreme ultraviolet (EUV) of a free-electron laser (FEL) is a prime candidate as a next-generation EUV lithography light source. However, the physical events and chemical reactions in resist materials, induced by the short-pulse EUV, have not yet been elucidated. In this study, the morphological and chemical changes in poly(methyl methacrylate) (PMMA) induced by picosecond-pulsed EUV were investigated using an X-ray laser (XRL) as a touchstone for next-generation EUV-FEL lithography. The XRL is suitable for the evaluation of resist materials in next-generation EUV-FEL lithography because of its short pulse width (7 ps) and high intensity (approximately 200 nJ/pulse at a maximum). The sensitivity of PMMA upon exposure to a 7 ps XRL pulse was enhanced by approximately 50 times in comparison with using conventional EUV sources, which have a typical pulse width of the order of nanoseconds. X-ray photoelectron spectroscopy revealed the decomposition of both the main and side chains of PMMA after XRL irradiation. These changes only occurred for relatively high doses of EUV irradiation at picosecond timescales. Thus, the results suggest the importance of a specific resist design for next-generation EUV-FEL lithography. |
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| 書誌情報 |
Applied Physics Letters 巻 115, 号 7, p. 073109, 発行日 2019-08 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5116284 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://aip.scitation.org/doi/10.1063/1.5116284 | |||||
