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Radiation Hardness Testing for Electronics against High Energy Ions
https://repo.qst.go.jp/records/76131
https://repo.qst.go.jp/records/7613169989282-27b5-46fb-b6df-01aefccbad2c
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-06-27 | |||||
| タイトル | ||||||
| タイトル | Radiation Hardness Testing for Electronics against High Energy Ions | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Makino, Takahiro
× Makino, Takahiro× Ohshima, Takeshi× Makino, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The mechanisms of Single Event Effects (SEEs) on Silicon Carbide (SiC) power devices are becoming clearer. However, to completely understand the mechanisms of SEEs on SiC power devices and to explore radiation hardened technologies for SiC power devices, it is necessary to study the radiation response of SiC power devices using high-energy heavy ions at accelerator facilities such as the Heavy Ion Medical Accelerator in Chiba (HIMAC). The radiation hardening test methodology using high energy heavy ions is reviewed and the application of HIMAC for SEE testing is introduced with recent results from tests of SiC power devices. | |||||
| 書誌情報 |
RADIOISOTOPES 巻 68, 号 6, p. 423-431, 発行日 2019-06 |
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| 出版者 | ||||||
| 出版者 | Japan Radioisotope Association | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0033-8303 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.3769/radioisotopes.68.423 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.jstage.jst.go.jp/article/radioisotopes/68/6/68_680612/_article/-char/ja/ | |||||
