@article{oai:repo.qst.go.jp:00076131,
 author = {Makino, Takahiro and Ohshima, Takeshi and Makino, Takahiro and Ohshima, Takeshi},
 issue = {6},
 journal = {RADIOISOTOPES},
 month = {Jun},
 note = {The mechanisms of Single Event Effects (SEEs) on Silicon Carbide (SiC) power devices are becoming clearer. However, to completely understand the mechanisms of SEEs on SiC power devices and to explore radiation hardened technologies for SiC power devices, it is necessary to study the radiation response of SiC power devices using high-energy heavy ions at accelerator facilities such as the Heavy Ion Medical Accelerator in Chiba (HIMAC). The radiation hardening test methodology using high energy heavy ions is reviewed and the application of HIMAC for SEE testing is introduced with recent results from tests of SiC power devices.},
 pages = {423--431},
 title = {Radiation Hardness Testing for Electronics against High Energy Ions},
 volume = {68},
 year = {2019}
}