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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC
https://repo.qst.go.jp/records/76111
https://repo.qst.go.jp/records/761112021c43b-cfb1-4744-8691-13b7baef027a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-06-27 | |||||
| タイトル | ||||||
| タイトル | Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Tien Son, Nguyen
× Tien Son, Nguyen× Stenberg, Pontus× Jokubavicius, Valdas× Abe, Hiroshi× Ohshima, Takeshi× G. Ivanov, Ivan× UI Hassan, Jawad× Abe, Hiroshi× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The carbon antisite-vacancy pair (CsiVc) in silicon carbide (SiC) has recently emerged as a promising defect for quantum applications. In the positive charge state, CsiVc+ can be engineered to produce ultrabright single photon sources in the red spectral region. On the other hand, in the neutral charge state, it has been predicted to emit light at telecom wavelengths and to have spin properties suitable for a quantum bit. In this study, by electron paramagnetic resonance study using ultrapure compensated isotope-enriched 4H-28SiC, we determine the (+/0) level of CsiVc, and then, the positive and neutral charge states of the defect can be optically controlled. | |||||
| 書誌情報 |
Applied Physics Letters 巻 114, p. 212105-1-212105-5, 発行日 2019-05 |
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| 出版者 | ||||||
| 出版者 | AIP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5098070 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://aip.scitation.org/doi/10.1063/1.5098070 | |||||
