@article{oai:repo.qst.go.jp:00076111,
 author = {Tien Son, Nguyen and Stenberg, Pontus and Jokubavicius, Valdas and Abe, Hiroshi and Ohshima, Takeshi and G. Ivanov, Ivan and UI Hassan, Jawad and Abe, Hiroshi and Ohshima, Takeshi},
 journal = {Applied Physics Letters},
 month = {May},
 note = {The carbon antisite-vacancy pair (CsiVc) in silicon carbide (SiC) has recently emerged as a promising defect for quantum applications. In the positive charge state, CsiVc+ can be engineered to produce ultrabright single photon sources in the red spectral region. On the other hand, in the neutral charge state, it has been predicted to emit light at telecom wavelengths and to have spin properties suitable for a quantum bit. In this study, by electron paramagnetic resonance study using ultrapure compensated isotope-enriched 4H-28SiC, we determine the (+/0) level of CsiVc, and then, the positive and neutral charge states of the defect can be optically controlled.},
 pages = {212105-1--212105-5},
 title = {Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC},
 volume = {114},
 year = {2019}
}