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In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires
https://repo.qst.go.jp/records/75880
https://repo.qst.go.jp/records/758800f515b3d-2f1c-4db1-b9ca-4654e91e42b4
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-05-23 | |||||
| タイトル | ||||||
| タイトル | In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
杉谷, 寛弥
× 杉谷, 寛弥× 佐々木, 拓生× 上杉, 智洋× 高橋, 正光× Sugitani, Kanya× Sasaki, Takuo× Uesugi, Tomohiro× Takahashi, Masamitsu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The molecular beam epitaxial (MBE) growth of twenty-period InGaN/GaN multi-quantum-well (MQW) nanowires was investigated by in situ X-ray reciprocal space mapping (in situ RSM). The evolution of strain, composition, and their inhomogeneities during the growth significantly varied with increasing number of QWs. After the growth of the ninth QWs, InGaN was tensilely strained with poor crystalline quality as inferred from the diffraction peak position and shape. At the same time, another peak emerged at the higher indium composition, suggesting the segregation of InN in the MQW nanowires. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Compound Semiconductor Week 2019 | |||||
| 発表年月日 | ||||||
| 日付 | 2019-05-20 | |||||
| 日付タイプ | Issued | |||||
