{"created":"2023-05-15T14:55:52.796591+00:00","id":75880,"links":{},"metadata":{"_buckets":{"deposit":"48e82c3d-ef87-471d-8be4-0c17793fa1e9"},"_deposit":{"created_by":1,"id":"75880","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"75880"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00075880","sets":["10:28"]},"author_link":["850984","850977","850982","850981","850983","850980","850978","850979"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-05-20","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The molecular beam epitaxial (MBE) growth of twenty-period InGaN/GaN multi-quantum-well (MQW) nanowires was investigated by in situ X-ray reciprocal space mapping (in situ RSM). The evolution of strain, composition, and their inhomogeneities during the growth significantly varied with increasing number of QWs. After the growth of the ninth QWs, InGaN was tensilely strained with poor crystalline quality as inferred from the diffraction peak position and shape. At the same time, another peak emerged at the higher indium composition, suggesting the segregation of InN in the MQW nanowires. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"Compound Semiconductor Week 2019","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"杉谷, 寛弥"}],"nameIdentifiers":[{"nameIdentifier":"850977","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"850978","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"上杉, 智洋"}],"nameIdentifiers":[{"nameIdentifier":"850979","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"850980","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugitani, Kanya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850981","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850982","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Uesugi, Tomohiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850983","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850984","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-05-23"},"publish_date":"2019-05-23","publish_status":"0","recid":"75880","relation_version_is_last":true,"title":["In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:26:59.950568+00:00"}