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Identification of divacancy and silicon vacancy qubits in 6H-SiC
https://repo.qst.go.jp/records/74880
https://repo.qst.go.jp/records/74880e77dbb8a-4ea8-482b-b327-8e75a72d13b4
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-03-22 | |||||
| タイトル | ||||||
| タイトル | Identification of divacancy and silicon vacancy qubits in 6H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Davidsson, Joel
× Davidsson, Joel× Ivady, Viktor× Armiento, Rickard× Ohshima, Takeshi× T. Son, N.× Gali, Adam× A. Abrikosov, Igor× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Negatively charged silicon vacancy and the neutral divacancy in SiC are known as point defects which are relevant for use in quantum technologies as room temperature qubits and single photon emitters. The possible nonequivalent configurations of these defects have been identified in 4H-SiC. However, those in 6H-SiC have not yet been well-understood. In this paper, we identify the different configurations of the silicon vacancy and the divacancy defects to each of the V1-V3 and the QL1-QL6 color centers in 6H-SiC, respectively. We accomplish this by comparing the results from ab initio calculations with experimental measurements for the zerophonon line, hyperfine tensor, and zero-field splitting. | |||||
| 書誌情報 |
Applied Physics Letters 巻 114, p. 112107, 発行日 2019-03 |
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| 出版者 | ||||||
| 出版者 | AIP Publishing | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5083031 | |||||
