@article{oai:repo.qst.go.jp:00074880,
 author = {Davidsson, Joel and Ivady, Viktor and Armiento, Rickard and Ohshima, Takeshi and T. Son, N. and Gali, Adam and A. Abrikosov, Igor and Ohshima, Takeshi},
 journal = {Applied Physics Letters},
 month = {Mar},
 note = {Negatively charged silicon vacancy and the neutral divacancy in SiC are known as point defects which are relevant for use in quantum technologies as room temperature qubits and single photon emitters. The possible nonequivalent configurations of these defects have been identified in 4H-SiC. However, those in 6H-SiC have not yet been well-understood. In this paper, we identify the different configurations of the silicon vacancy and the divacancy defects to each of the V1-V3 and the QL1-QL6 color centers in 6H-SiC, respectively. We accomplish this by comparing the results from ab initio calculations with experimental measurements for the zerophonon line, hyperfine tensor, and zero-field splitting.},
 title = {Identification of divacancy and silicon vacancy qubits in 6H-SiC},
 volume = {114},
 year = {2019}
}