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Ligand Hyperfine Interactions at Silicon Vacancies in 4H-SiC
https://repo.qst.go.jp/records/74877
https://repo.qst.go.jp/records/748776c03f5a4-8539-40af-bc73-c912befabab8
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-03-20 | |||||
タイトル | ||||||
タイトル | Ligand Hyperfine Interactions at Silicon Vacancies in 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
T. Son, N.
× T. Son, N.× Stenberg, P.× Jokubavicius, V.× Ohshima, Takeshi× U. Hassan, J.× G Ivanov, I.× Ohshima, Takeshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The negative silicon vacancy (Vsi ) in SiC has recently emerged as a promising defect for quantum technologies. However, its electronic structure has not yet fully characterized. Although the isolated Si vacancy might be only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H–SiC, Five electron paramagnetic resonance (EPR) centers were assigned to be Vsi in previous studies: the so-called isolated no-zero-field splitting (ZFS) Vsi center and another four axial configurations with small ZFS: TV1a, TV2a, TV1b, and TV2b. Using isotopically enriched 4H-28SiC, we were able to observe hf parameters of nearest C neighbors for all three components of the defect centers. It is suggested by EPR measurements that only TV1a and TV2a are related to Vsi. The two configurations of the so-called isolated no-ZFS Vsi center, Vsi (I) and Vsi (II), are actually the central lines corresponding to the transition of the TV2a and TV1a centers, respectively. | |||||
書誌情報 |
Journal of Physics: Condensed Matter 巻 31, p. 195501, 発行日 2019-03 |
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出版者 | ||||||
出版者 | IOP Publishing | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1088/1361-648X/ab072b | |||||
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識別子タイプ | URI | |||||
関連識別子 | https://iopscience.iop.org/article/10.1088/1361-648X/ab072b/meta |