@article{oai:repo.qst.go.jp:00074877,
 author = {T. Son, N. and Stenberg, P. and Jokubavicius, V. and Ohshima, Takeshi and U. Hassan, J. and G Ivanov, I. and Ohshima, Takeshi},
 journal = {Journal of Physics: Condensed Matter},
 month = {Mar},
 note = {The negative silicon vacancy (Vsi ) in SiC has recently emerged as a promising defect for quantum technologies. However, its electronic structure has not yet fully characterized. Although the isolated Si vacancy might be only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H–SiC,  Five electron paramagnetic resonance (EPR) centers were assigned to be Vsi in previous studies: the so-called isolated no-zero-field splitting (ZFS) Vsi center and another four axial configurations with small ZFS: TV1a, TV2a, TV1b, and TV2b. Using isotopically enriched 4H-28SiC, we were able to observe hf parameters of nearest C neighbors for all three components of the defect centers. It is suggested by EPR measurements that only TV1a and TV2a are related to Vsi. The two configurations of the so-called isolated no-ZFS Vsi center, Vsi (I) and Vsi (II), are actually the central lines corresponding to the transition of the TV2a and TV1a centers, respectively.},
 title = {Ligand Hyperfine Interactions at Silicon Vacancies in 4H-SiC},
 volume = {31},
 year = {2019}
}