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Recent advances in Ga2O3 MOSFET technologies
https://repo.qst.go.jp/records/74802
https://repo.qst.go.jp/records/74802633abb7c-547d-4953-8d09-287d764e1813
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-03-17 | |||||
| タイトル | ||||||
| タイトル | Recent advances in Ga2O3 MOSFET technologies | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Higashiwaki, Masataka
× Higashiwaki, Masataka× Hoi Wong, Man× Kamimura, Takafumi× Nakata, Yoshiaki× Chia-Hung, Lin× Lingaparthi, Ravikiran× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi× Hatta, Naoki× Yagi, Kuniaki× Goto, Ken× Sasaki, Kohei× Watanabe, Shinya× Kuramata, Akito× Yamakoshi, Shigenobu× Konishi, Keita× Murakami, Hisashi× Kumagai, Yoshinao× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Historically, the exploration of III-V compound semiconductors has begun with small bandgap materials and proceeded to large bandgap ones in recent years, that is, from GaAs-based compounds to GaN-based ones. We consider that gallium oxide (Ga2O3 ) is no exception in following this history and is poised to become the next mainstream of compound semiconductor research due to its attractive material properties based on an extremely large bandgap of about 4.5 eV. This bandgap energy is not only much larger than those of representative wide bandgap semiconductors such as GaN and SiC but also unique among single-crystal semiconductors. Furthermore, Ga2O3 has another important advantage for commercialization over the other wide bandgap materials in that large-size, high-quality bulk single crystals can be synthesized by melt growth methods, thus allowing native substrates to be produced at a relatively low cost. Recently, these two features have drawn much attention to Ga2O3, resulting in a rapid expansion of the Ga2O3 community. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 76th Device Research Conference (DRC 2018) | |||||
| 発表年月日 | ||||||
| 日付 | 2018-06-26 | |||||
| 日付タイプ | Issued | |||||
