@misc{oai:repo.qst.go.jp:00074802,
 author = {Higashiwaki, Masataka and Hoi Wong, Man and Kamimura, Takafumi and Nakata, Yoshiaki and Chia-Hung, Lin and Lingaparthi, Ravikiran and Takeyama, Akinori and Makino, Takahiro and Ohshima, Takeshi and Hatta, Naoki and Yagi, Kuniaki and Goto, Ken and Sasaki, Kohei and Watanabe, Shinya and Kuramata, Akito and Yamakoshi, Shigenobu and Konishi, Keita and Murakami, Hisashi and Kumagai, Yoshinao and Takeyama, Akinori and Makino, Takahiro and Ohshima, Takeshi},
 month = {Jun},
 note = {Historically, the exploration of III-V compound semiconductors has begun with small bandgap materials and proceeded to large bandgap ones in recent years, that is, from GaAs-based compounds to GaN-based ones. We consider that gallium oxide (Ga2O3 ) is no exception in following this history and is poised to become the next mainstream of compound semiconductor research due to its attractive material properties based on an extremely large bandgap of about 4.5 eV. This bandgap energy is not only much larger than those of representative wide bandgap semiconductors such as GaN and SiC but also unique among single-crystal semiconductors. Furthermore, Ga2O3 has another important advantage for commercialization over the other wide bandgap materials in that large-size, high-quality bulk single crystals can be synthesized by melt growth methods, thus allowing native substrates to be produced at a relatively low cost. Recently, these two features have drawn much attention to Ga2O3, resulting in a rapid expansion of the Ga2O3 community., 76th Device Research Conference (DRC 2018)},
 title = {Recent advances in Ga2O3 MOSFET technologies},
 year = {2018}
}