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Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping
https://repo.qst.go.jp/records/73416
https://repo.qst.go.jp/records/734161d7fed52-4266-44a8-8a80-c37c7e318a51
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-15 | |||||
| タイトル | ||||||
| タイトル | Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐々木, 拓生
× 佐々木, 拓生× 高橋, 正光× Sasaki, Takuo× Takahashi, Masamitsu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Using in situ synchrotron X-ray reciprocal space mapping, this study investigates the evolution of lattice deformations in the InGaAs/GaAs(111)A structure with or without a thin InAs layer grown by molecular beam epitaxy. During the initial growth phase, InGaAs directly grown on GaAs(111)A showed an anomalous lattice shrinkage along the c-axis, with no change in the indium composition. Conversely, the InGaAs grown on InAs/GaAs(111)A showed no initial lattice distortion, but a variable indium composition. The evolution of the diffraction peak broadening was also monitored. The results confirmed that the thin InAs layer effectively improved the crystal quality during the initial growth of InGaAs. | |||||
| 書誌情報 |
Journal of Crystal Growth 巻 512, p. 33-36, 発行日 2019-04 |
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| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0022-0248 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.jcrysgro.2019.02.007 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.sciencedirect.com/science/article/pii/S0022024819300831 | |||||
