{"created":"2023-05-15T14:53:55.062152+00:00","id":73416,"links":{},"metadata":{"_buckets":{"deposit":"096635bc-0262-4b6a-b4ec-a84ae0e357dd"},"_deposit":{"created_by":1,"id":"73416","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73416"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073416","sets":["1"]},"author_link":["742139","742140","742142","742141"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-04","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"36","bibliographicPageStart":"33","bibliographicVolumeNumber":"512","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Using in situ synchrotron X-ray reciprocal space mapping, this study investigates the evolution of lattice deformations in the InGaAs/GaAs(111)A structure with or without a thin InAs layer grown by molecular beam epitaxy. During the initial growth phase, InGaAs directly grown on GaAs(111)A showed an anomalous lattice shrinkage along the c-axis, with no change in the indium composition. Conversely, the InGaAs grown on InAs/GaAs(111)A showed no initial lattice distortion, but a variable indium composition. The evolution of the diffraction peak broadening was also monitored. The results confirmed that the thin InAs layer effectively improved the crystal quality during the initial growth of InGaAs.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jcrysgro.2019.02.007","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.sciencedirect.com/science/article/pii/S0022024819300831","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"742139","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"742140","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"742141","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"742142","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-02-15"},"publish_date":"2019-02-15","publish_status":"0","recid":"73416","relation_version_is_last":true,"title":["Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T01:49:55.140895+00:00"}