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Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium Nitride
https://repo.qst.go.jp/records/73035
https://repo.qst.go.jp/records/73035475e9cb3-86d0-460f-b063-e76a9d33eb3a
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-11-20 | |||||
| タイトル | ||||||
| タイトル | Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium Nitride | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐藤, 真一郎
× 佐藤, 真一郎× Deki, Manato× Nakamura, Tohru× Nishimura, Tomoaki× Stavrevski, Daniel× Gibson, Brant× Ohshima, Takeshi× 佐藤 真一郎× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Showing strong photoluminescence and electroluminescence with a narrow linewidth even at room temperature, lanthanide doped in gallium nitride (GaN) semiconductor can be potentially used for “quantum sensing”, high-sensitivity magnetic field and temperature sensing with nano-scale resolution. In this study, praseodymium (Pr) ions were implanted into micro-regions on GaN by using photolithography technique and were activated by SiN cap annealing technique. The photoluminescence from implanted Pr was measured by laser scanning confocal microscope at room temperature. As a result, the strong photoluminescence from Pr implanted in 100nm x 100nm square was successfully measured. In this presentation, we report the dependences of excitation laser power and wavelength, and discuss the detection limit and further miniaturization. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | IWN2018国際シンポジウム参加の為 | |||||
| 発表年月日 | ||||||
| 日付 | 2018-11-15 | |||||
| 日付タイプ | Issued | |||||
