@misc{oai:repo.qst.go.jp:00073035,
 author = {佐藤, 真一郎 and Deki, Manato and Nakamura, Tohru and Nishimura, Tomoaki and Stavrevski, Daniel and Gibson, Brant and Ohshima, Takeshi and 佐藤 真一郎 and 大島 武},
 month = {Nov},
 note = {Showing strong photoluminescence and electroluminescence with a narrow linewidth even at room temperature, lanthanide doped in gallium nitride (GaN) semiconductor can be potentially used for “quantum sensing”, high-sensitivity magnetic field and temperature sensing with nano-scale resolution. In this study, praseodymium (Pr) ions were implanted into micro-regions on GaN by using photolithography technique and were activated by SiN cap annealing technique. The photoluminescence from implanted Pr was measured by laser scanning confocal microscope at room temperature. As a result, the strong photoluminescence from Pr implanted in 100nm x 100nm square was successfully measured. In this presentation, we report the dependences of excitation laser power and wavelength, and discuss the detection limit and further miniaturization., IWN2018国際シンポジウム参加の為},
 title = {Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium Nitride},
 year = {2018}
}