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Development of Extremely High Radiation Resistant Electronic Devices Based on Silicon Carbide Semiconductor
https://repo.qst.go.jp/records/73011
https://repo.qst.go.jp/records/73011c4bbcd0d-6ae4-4af7-8628-de7b94ac81ce
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-11-13 | |||||
| タイトル | ||||||
| タイトル | Development of Extremely High Radiation Resistant Electronic Devices Based on Silicon Carbide Semiconductor | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ohshima, Takeshi
× Ohshima, Takeshi× Takeyama, Akinori× Makino, Takahiro× Yamazaki, Yuichi× Shimizu, K.× Tanaka, Y.× Meguro, T.× Hasebe, F.× Kuroki, S-I.× 大島 武× 武山 昭憲× 牧野 高紘× 山崎 雄一 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | After the Great East Japan Earthquake in March 2011, electronic devices with extremely high radiation tolerance (rad-hard), such as MGy order, are required for the decommissioning of Tokyo Electric Power Company (TEPCO) Fukushima Dai-ichi nuclear reactors. Silicon carbide (SiC) is regarded as a promising candidate for highly reliable electronic devices used in harsh environments such as high radiation and high temperature. For the development of rad-hard electronic devices based on SiC, it is necessary to understand radiation degradation of SiC devices and to develop their radiation hardened technologies. QST, AIST and Hiroshima University together are developing ultra-radiation-hardened semiconductor devices using SiC, especially, image sensors. In this study, we introduce irradiation facilities at QST, Takasaki and radiation response of SiC devices. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 3rd Interational Symposium on Biomedical Engineering (ISBE2018) | |||||
| 発表年月日 | ||||||
| 日付 | 2018-11-08 | |||||
| 日付タイプ | Issued | |||||
