@misc{oai:repo.qst.go.jp:00073011,
 author = {Ohshima, Takeshi and Takeyama, Akinori and Makino, Takahiro and Yamazaki, Yuichi and Shimizu, K. and Tanaka, Y. and Meguro, T. and Hasebe, F. and Kuroki, S-I. and 大島 武 and 武山 昭憲 and 牧野 高紘 and 山崎 雄一},
 month = {Nov},
 note = {After the Great East Japan Earthquake in March 2011, electronic devices with extremely high radiation tolerance (rad-hard), such as MGy order, are required for the decommissioning of Tokyo Electric Power Company (TEPCO) Fukushima Dai-ichi nuclear reactors. Silicon carbide (SiC) is regarded as a promising candidate for highly reliable electronic devices used in harsh environments such as high radiation and high temperature. For the development of rad-hard electronic devices based on SiC, it is necessary to understand radiation degradation of SiC devices and to develop their radiation hardened technologies. QST, AIST and Hiroshima University together are developing ultra-radiation-hardened semiconductor devices using SiC, especially, image sensors. In this study, we introduce irradiation facilities at QST, Takasaki and radiation response of SiC devices., The 3rd Interational Symposium on Biomedical Engineering (ISBE2018)},
 title = {Development of Extremely High Radiation Resistant Electronic Devices Based on Silicon Carbide Semiconductor},
 year = {2018}
}