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Radiation Hardness of Ga2O3 MOSFETs against Gamma-Ray Irradiation
https://repo.qst.go.jp/records/66669
https://repo.qst.go.jp/records/66669674cb952-1265-44e5-9437-f7c4764c6ec2
Item type | 会議発表用資料 / Presentation(1) | |||||
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公開日 | 2018-03-19 | |||||
タイトル | ||||||
タイトル | Radiation Hardness of Ga2O3 MOSFETs against Gamma-Ray Irradiation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Hoi, Wong Man
× Hoi, Wong Man× 武山, 昭憲× 牧野, 高紘× 大島, 武× Sasaki, Kohei× Kuramata, Akito× Yamakoshi, Shigenobu× Higashiwaki, Masataka× 武山 昭憲× 牧野 高紘× 大島 武 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Gallium oxide (Ga2O3) is attractive for power devices owing to its wide bandgap of 4.5 eV and the availability of economical device-quality native substrates. Recent research on Ga2O3 Schottky barrier diodes and field-effect transistors (FETs) has seen rapid progress. An unexplored area of immense interest is the radiation tolerance of these devices, whose high-voltage and high-temperature capabilities are expected to find applications in extreme radiation environments such as space and nuclear facilities that impose stringent reliability requirements to ensure stable operations. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 metal oxide-semiconductor FETs (MOSFETs). A gamma-ray (γ-ray) tolerance as high as 230 kGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable on-current, on-resistance (RON), and threshold voltage (VT). Radiation-induced degradations in the gate insulation and surface passivation, which could be attributed to dielectric damage and interface trap generation, were found to limit the overall radiation resistance of these devices. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 75th Device Research Conference (DRC) | |||||
発表年月日 | ||||||
日付 | 2017-06-25 | |||||
日付タイプ | Issued |