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  1. 学会発表・講演等
  2. 口頭発表

Radiation Hardness of Ga2O3 MOSFETs against Gamma-Ray Irradiation

https://repo.qst.go.jp/records/66669
https://repo.qst.go.jp/records/66669
674cb952-1265-44e5-9437-f7c4764c6ec2
Item type 会議発表用資料 / Presentation(1)
公開日 2018-03-19
タイトル
タイトル Radiation Hardness of Ga2O3 MOSFETs against Gamma-Ray Irradiation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Hoi, Wong Man

× Hoi, Wong Man

WEKO 655644

Hoi, Wong Man

Search repository
武山, 昭憲

× 武山, 昭憲

WEKO 655645

武山, 昭憲

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牧野, 高紘

× 牧野, 高紘

WEKO 655646

牧野, 高紘

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大島, 武

× 大島, 武

WEKO 655647

大島, 武

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Sasaki, Kohei

× Sasaki, Kohei

WEKO 655648

Sasaki, Kohei

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Kuramata, Akito

× Kuramata, Akito

WEKO 655649

Kuramata, Akito

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Yamakoshi, Shigenobu

× Yamakoshi, Shigenobu

WEKO 655650

Yamakoshi, Shigenobu

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Higashiwaki, Masataka

× Higashiwaki, Masataka

WEKO 655651

Higashiwaki, Masataka

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武山 昭憲

× 武山 昭憲

WEKO 655652

en 武山 昭憲

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牧野 高紘

× 牧野 高紘

WEKO 655653

en 牧野 高紘

Search repository
大島 武

× 大島 武

WEKO 655654

en 大島 武

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抄録
内容記述タイプ Abstract
内容記述 Gallium oxide (Ga2O3) is attractive for power devices owing to its wide bandgap of 4.5 eV and the availability of economical device-quality native substrates. Recent research on Ga2O3 Schottky barrier diodes and field-effect transistors (FETs) has seen rapid progress. An unexplored area of immense interest is the radiation tolerance of these devices, whose high-voltage and high-temperature capabilities are expected to find applications in extreme radiation environments such as space and nuclear facilities that impose stringent reliability requirements to ensure stable operations. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 metal oxide-semiconductor FETs (MOSFETs). A gamma-ray (γ-ray) tolerance as high as 230 kGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable on-current, on-resistance (RON), and threshold voltage (VT). Radiation-induced degradations in the gate insulation and surface passivation, which could be attributed to dielectric damage and interface trap generation, were found to limit the overall radiation resistance of these devices.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 75th Device Research Conference (DRC)
発表年月日
日付 2017-06-25
日付タイプ Issued
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